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: Explores scaling issues and novel concepts such as nanotube/nanoribbon field-effect transistors, phase-change memory, and spin-transfer devices.
The is a massive, nearly 1,700-page reference work published in late 2022 that serves as a definitive guide for professionals, material scientists, and electrical engineers. Edited by Massimo Rudan, Rossella Brunetti, and Susanna Reggiani, it features contributions from approximately 100 leading international scientists across academia and industry. Core Content Structure
: Covers conventional components like bipolar transistors and MOS capacitors/transistors used in standard integrated circuits.
: Details fabrication steps, material description, and isolation schemes (e.g., junction and deep trench isolation).
: Illustrates numerical simulation methods ranging from fabrication process modeling to device performance, including drift-diffusion and quantum ballistic models. Technical Highlights
